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DMN2011UTS-13

Part No DMN2011UTS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 21A 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 41 Weeks
Features N-Channel 20 V 21A (Tc) 1.3W (Ta) Surface Mount 8-TSSOP
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-TSSOP (0.173", 4.40mm Width)
Case / Package 8-TSSOP
Family Name DMN2011
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN2011UTS-13-ND, DMN2011UTS-13DICT, DMN2011UTS-13DIDKR, DMN2011UTS-13DITR
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868945-DMN2011UTS-13
Ultra Librarian 3D Model Ultra Librarian DMN2011UTS-13 CAD Model

Description

DMN2011UTS-13 - N-Channel Enhancement Mode Field Effect Transistor

The DMN2011UTS-13 is a high-performance, N-Channel enhancement mode field effect transistor (FET) from Diodes Incorporated, designed to deliver efficient power control and switching. This compact and energy-efficient MOSFET is an ideal choice for a wide range of applications, particularly where space is at a premium and low on-resistance is required.

Key Features

  • Low On-Resistance: The DMN2011UTS-13 offers exceptionally low on-resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: With its fast switching speed, this MOSFET is suitable for high-frequency applications, ensuring quick response times and reduced switching losses.
  • Low Threshold Voltage: The low threshold voltage allows for operation at lower gate voltages, making it compatible with low-voltage drive signals and reducing power consumption.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), providing robust performance for demanding power applications.
  • Surface-Mount Package: The DMN2011UTS-13 comes in a space-saving, surface-mount package, which is highly beneficial for compact circuit designs.
  • RoHS Compliant: Compliance with RoHS standards ensures that the MOSFET is free of hazardous substances, making it environmentally friendly and suitable for use in various global markets.

Applications

The DMN2011UTS-13 is versatile and can be used in a diverse range of electronic circuits, including:

  • Power Management Systems
  • DC-DC Converters
  • Load Switches
  • Battery Management
  • Motor Control Circuits
  • Portable Devices

Technical Specifications

With a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±8V, the DMN2011UTS-13 is robust against potential voltage spikes. The device also features a maximum continuous drain current (ID) of 6.5A, ensuring it can handle high current loads. Thermal performance is managed with a maximum junction temperature of 150°C, allowing for reliable operation under a range of temperature conditions.

For engineers and designers looking for a reliable and efficient N-Channel MOSFET, the DMN2011UTS-13 from Diodes Incorporated offers a compelling mix of performance, size, and environmental compliance, making it a smart choice for cutting-edge electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2845 $51.2100
380+ $0.2662 $101.1560
585+ $0.2570 $150.3450
840+ $0.2387 $200.5080
1,090+ $0.2295 $250.1550
1,365+ $0.2203 $300.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,820 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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