Product Overview: DMN2013UFDE-7

The DMN2013UFDE-7 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets.

Key Features

• Low On-Resistance: The device boasts a low on-resistance, which ensures minimal power loss and heat generation during operation, making it suitable for power-efficient applications.
• High-Speed Switching: It is designed for high-speed switching applications, which makes it an ideal choice for power management in modern electronic devices.
• Miniature Package: The DMN2013UFDE-7 comes in an ultra-small DFN2020-6 (Dual-Flat No-Leads) package, which is ideal for space-constrained applications.
• Low Threshold Voltage: The low threshold voltage feature allows for the device to be driven at lower voltages, which can be beneficial in low voltage applications.

Applications

This FET is versatile and can be used in a wide range of applications, including:

• Load/Power Switches
• Power Management Functions
• DC-DC Converters
• Battery Management Systems
• Computing & Network Equipment

Specifications

The DMN2013UFDE-7 has the following specifications:

• Drain-Source Voltage (V_DS): 30V
• Continuous Drain Current (I_D): 6.5A
• Power Dissipation (P_D): 2.5W
• Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMN2013UFDE-7 is subjected to rigorous testing and quality control measures to ensure reliable performance in various applications and environments.