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DMN2016LHAB-7

Part No DMN2016LHAB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 7.5A 6-Pin UDFN EP T/R / MOSFET 2N-CH 20V 7.5A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.5A
Maximum Rds On at Id,Vgs 15.5 mOhm @ 4A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1550pF @ 10V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-DFN2030-6
Win Source Part Number 080567-DMN2016LHAB-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name DMN2016LHAB
Introduction Date March 18, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DMN2016LHAB-7 CAD Model

Description

DMN2016LHAB-7 MOSFET from Diodes Incorporated

The DMN2016LHAB-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a part of Diodes Incorporated's extensive range of discrete, logic, analog, and mixed-signal semiconductors. The DMN2016LHAB-7 is specifically engineered to deliver efficient power management and signal amplification in a variety of applications.

Constructed with advanced trench technology, the DMN2016LHAB-7 offers low on-resistance (R<sub>DS(on)) and a minimal gate charge (Q<sub>G), which translates to reduced conduction and switching losses. This makes it an ideal choice for power-sensitive applications. The device operates at a continuous drain current of 6.5A, and it can handle pulsed drain currents up to 26A, providing ample current capacity for most low to medium power requirements.

The DMN2016LHAB-7 comes in a compact SOT-23 package, which is widely preferred for surface-mount technology (SMT) due to its small footprint and ease of integration into various circuit designs. The package is RoHS compliant, ensuring it meets current environmental standards that restrict the use of hazardous substances in electronic components.

Key features of the DMN2016LHAB-7 include:

  • V<sub>DS (Drain-Source Voltage): 20V
  • I<sub>D (Continuous Drain Current): 6.5A
  • R<sub>DS(on) (Static Drain-Source On-Resistance): 20 mΩ at V<sub>GS = 4.5V
  • Fast switching speed
  • Low input capacitance
  • High input impedance
  • Thermal shutdown feature for added protection

Applications for the DMN2016LHAB-7 MOSFET are diverse and include power management circuits, DC/DC converters, load switches, and motor control circuits in consumer electronics, telecommunications, and computing industries. Its high efficiency and reliability also make it suitable for battery management systems and power supply designs.

With its combination of performance, efficiency, and compact packaging, the DMN2016LHAB-7 from Diodes Incorporated is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1811 $57.9520
685+ $0.1695 $116.1075
1,060+ $0.1637 $173.5220
1,520+ $0.1520 $231.0400
1,980+ $0.1461 $289.2780
2,475+ $0.1402 $346.9950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,600 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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