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DMN2026UVT-13

Part No DMN2026UVT-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.2A TSOT-26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.4 nC @ 8 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 887 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.15W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSOT-23-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number DMN2026
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378261-DMN2026UVT-13
Ultra Librarian 3D Model Ultra Librarian DMN2026UVT-13 CAD Model

Description

The DMN2026UVT-13 is a state-of-the-art, high-performance N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is specifically engineered to meet the demanding requirements of modern electronic circuits, offering a compact design with exceptional efficiency and reliability.

Key Features and Benefits:

  • Low On-Resistance: The DMN2026UVT-13 boasts an ultra-low on-resistance (RDS(on)), which significantly reduces conduction losses, leading to higher efficiency in power management applications.
  • High Continuous Drain Current: With a high continuous drain current (ID) capability, this MOSFET can handle substantial current loads, making it suitable for high-power applications.
  • High-Speed Switching: Designed for fast switching performance, the DMN2026UVT-13 minimizes switching losses, which is critical for power conversion and regulation circuits.
  • Thermal Performance: The MOSFET is encapsulated in a thermally efficient, ultra-thin DFN2020-6 (Type B) package, which provides excellent heat dissipation, ensuring stable operation even under high power and temperature conditions.
  • Low Threshold Voltage: A low gate threshold voltage (VGS(th)) allows for the device to be driven at lower voltages, which is beneficial for low-voltage applications.
  • Halogen-Free: As an environmentally conscious product, the DMN2026UVT-13 is completely halogen-free, adhering to international environmental standards and regulations.

Applications:

The DMN2026UVT-13 is versatile and can be used in a wide array of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing and Server Applications

With its robust design and superior electrical characteristics, the DMN2026UVT-13 is an excellent choice for designers looking to improve power efficiency and performance in their electronic systems. Diodes Incorporated's commitment to quality ensures that this MOSFET will deliver consistent and reliable performance for a wide range of industrial, commercial, and consumer applications.

Summary:

The DMN2026UVT-13 from Diodes Incorporated represents a blend of advanced technology and environmental friendliness, making it a prime choice for engineers and designers who require a high-performance MOSFET for their next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1508 $58.0580
935+ $0.1237 $115.6595
1,450+ $0.1199 $173.8550
1,995+ $0.1160 $231.4200
2,575+ $0.1122 $288.9150
3,450+ $0.1005 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,160 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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