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DMN3009SFG-7

Part No DMN3009SFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 15 V
Power Dissipation (Max) 900mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
Base Product Number DMN3009
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585453-DMN3009SFG-7
Ultra Librarian 3D Model Ultra Librarian DMN3009SFG-7 CAD Model

Description

DMN3009SFG-7 MOSFET by Diodes Incorporated

The DMN3009SFG-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing industry-leading solutions for power management and switching applications.

Constructed with advanced trench technology, the DMN3009SFG-7 offers superior on-state resistance (RDS(on)) of just 25 mΩ at VGS = 10V, which significantly reduces conduction losses and improves overall efficiency. This feature makes it an ideal choice for a wide range of power applications, including load switches, power management devices, and DC-DC converters.

The DMN3009SFG-7 is presented in a compact SOT-23F package, which not only saves valuable board space but also ensures a low thermal resistance pathway to the surrounding ambient, thereby enhancing the thermal performance of the device. With a continuous drain current (ID) of 7.5A and a maximum drain-source voltage (VDSS) of 30V, this MOSFET is capable of handling moderate power levels while operating at efficient voltage levels.

Furthermore, the DMN3009SFG-7 features fast switching speeds, which are critical for high-frequency applications. Its low gate charge (QG) and low input capacitance (Ciss) contribute to reduced switching losses, making it an excellent choice for high-efficiency power supplies and motor control circuits.

With its robustness and reliability, the DMN3009SFG-7 is also characterized by its ability to withstand high energy pulses in the avalanche and commutation modes, which is essential for applications that may experience unexpected voltage transients.

In summary, the DMN3009SFG-7 MOSFET from Diodes Incorporated is a high-efficiency, high-performance component suitable for a diverse range of electronic applications. Its low on-resistance, high current capability, and fast switching performance make it a versatile choice for designers looking to optimize their power management systems.

For detailed specifications and application guidelines, engineers and designers are encouraged to refer to the official datasheet provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3768 $58.4040
375+ $0.3092 $115.9500
580+ $0.2995 $173.7100
800+ $0.2899 $231.9200
1,035+ $0.2802 $290.0070
1,380+ $0.2513 $346.7940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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