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DMN3010LFG-7

Part No DMN3010LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 2075pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033739-DMN3010LFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3010LFG-7 CAD Model

Description

Overview of Product DMN3010LFG-7

The DMN3010LFG-7 is a high-performance, N-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and switching with a focus on energy-saving and space-critical applications.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance (RDS(on)) of just 8.5mΩ at VGS = 10V, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: It supports a continuous drain current (ID) of up to 24A, making it suitable for high current applications.
  • Power Dissipation: With a power dissipation of 2.5W, this MOSFET can handle significant power levels, ensuring reliability in demanding situations.
  • Advanced Packaging: The DMN3010LFG-7 comes in a compact, surface-mount PowerDI3333-8 package, which provides excellent thermal performance and saves board space.
  • Fast Switching Speed: Engineered for fast switching, the device ensures minimal switching losses, which is critical for high-frequency power conversion.
  • Gate Charge: It has a low total gate charge (QG) that reduces switching energy and enhances power efficiency.
  • Threshold Voltage: The MOSFET has a threshold voltage (Vth) of 1.4V, which allows for low-voltage operation.

Applications

The DMN3010LFG-7 is versatile and can be used in a wide array of applications, including:

  • DC/DC Converters
  • Power Management Functions
  • Load Switches
  • Motor Drives
  • Battery Management Systems
  • Computing and Server Applications

Quality and Reliability

Diodes Incorporated ensures that the DMN3010LFG-7 meets the highest quality and reliability standards. The device is RoHS compliant and is designed to withstand rigorous environmental and operational conditions.

Conclusion

With its robust design, energy efficiency, and compact form factor, the DMN3010LFG-7 from Diodes Incorporated stands out as a superior choice for designers looking to optimize power management in their electronic systems. Whether it's for industrial, automotive, or consumer electronics, this MOSFET delivers the performance and reliability that modern applications demand.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7894 $51.3110
155+ $0.6477 $100.3935
240+ $0.6275 $150.6000
330+ $0.6072 $200.3760
430+ $0.5870 $252.4100
575+ $0.5263 $302.6225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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