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DMN3032LE-13

Part No DMN3032LE-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.6A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 11.3nC @ 10V
Max Input Capacitance 498pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 29 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1033753-DMN3032LE-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN3032LE-13 CAD Model

Description

DMN3032LE-13 MOSFET by Diodes Incorporated

The DMN3032LE-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power control and management across a wide range of applications. With its compact and durable design, the DMN3032LE-13 is an ideal choice for space-constrained and energy-sensitive environments.

The device features a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 7.5A, and a power dissipation of 2.5W, which makes it suitable for high-efficiency power conversion and switching applications. The low on-resistance (RDS(on)) of just 24mΩ at VGS = 10V ensures minimal power loss during operation, contributing to overall system efficiency.

One of the key advantages of the DMN3032LE-13 is its thermal performance. The MOSFET comes in a RoHS-compliant, SOT-23 package, which is known for its excellent thermal characteristics, ensuring reliability even under challenging thermal conditions. This makes the DMN3032LE-13 a reliable choice for power management tasks in consumer electronics, portable devices, power supplies, and other applications where efficient heat dissipation is crucial.

The DMN3032LE-13 also features fast switching speeds, which are essential for reducing switching losses in high-frequency power circuits. This capability is particularly beneficial in applications such as DC-DC converters, motor drives, and other power-intensive applications where speed and efficiency are paramount.

For designers and engineers looking for a MOSFET that balances performance with practicality, the DMN3032LE-13 from Diodes Incorporated stands out. Its combination of low on-resistance, high current capability, and robust thermal properties make it a versatile and reliable component for a variety of power management applications.

Overall, the DMN3032LE-13 is a testament to Diodes Incorporated's commitment to providing high-quality, efficient semiconductors that meet the evolving needs of modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.0944 $50.0320
1,135+ $0.0884 $100.3340
1,760+ $0.0854 $150.3040
2,520+ $0.0795 $200.3400
3,270+ $0.0765 $250.1550
4,085+ $0.0735 $300.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 290,000 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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