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DMN3033LSD-13

Part No DMN3033LSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A
Maximum Rds On at Id,Vgs 20 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 725pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 080576-DMN3033LSD-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3033LSD-13 CAD Model

Description

Product Overview: DMN3033LSD-13

The DMN3033LSD-13 is a high-performance, N-Channel MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This product is well-suited for a variety of applications, including power management, load switching, and conversion in consumer, industrial, and automotive sectors.

Key Features

  • Voltage Rating: The DMN3033LSD-13 is designed to handle a drain-source voltage (VDS) of 30V, making it suitable for low to medium voltage applications.
  • Current Capacity: This MOSFET can deliver continuous drain current (ID) up to 8.3A, ensuring robust performance for a wide range of electrical loads.
  • RDS(on): It boasts a low on-resistance of typically 24mΩ at VGS = 10V, which translates to higher efficiency and lower power losses during operation.
  • Power Dissipation: With a power dissipation of 1.25W, the DMN3033LSD-13 can manage considerable energy without compromising its integrity or performance.
  • Package: The product comes in a space-saving, surface-mount SO-8 package, which is ideal for compact circuit designs.

Advantages

The DMN3033LSD-13 offers several advantages that make it a reliable and efficient choice for designers and engineers. Its low threshold voltage ensures easy drive capability, and the low capacitance contributes to faster switching speeds. Additionally, the MOSFET's low on-resistance minimizes losses, which is critical for energy-sensitive applications.

Applications

Thanks to its versatile characteristics, the DMN3033LSD-13 is suitable for a wide array of applications:

  • DC/DC Converters
  • Power Supply Load Switches
  • Motor Drives
  • Battery Management Systems
  • Charge and Discharge Switches for Battery Protection
  • Power Management for Portable Devices

With its combination of efficiency, reliability, and compact form factor, the DMN3033LSD-13 from Diodes Incorporated stands out as a versatile component that meets the stringent requirements of modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2710 $50.1350
450+ $0.2224 $100.0800
700+ $0.2154 $150.7800
960+ $0.2085 $200.1600
1,245+ $0.2015 $250.8675
1,665+ $0.1807 $300.8655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,410 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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