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DMN3051LDM-7

Part No DMN3051LDM-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A SOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 8.6nC @ 10V
Max Input Capacitance 424pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 38 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 014435-DMN3051LDM-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3051LDM-7 CAD Model

Description

DMN3051LDM-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMN3051LDM-7 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing power management solutions that are both efficient and cost-effective for a wide range of applications.

Constructed with advanced trench technology, the DMN3051LDM-7 offers a low on-resistance (R<sub>DS(on)) and a high continuous drain current (I<sub>D), making it an excellent choice for power switching applications. This MOSFET is housed in a compact SOT-23 package, which is ideal for space-constrained applications while still providing the thermal performance required for reliable operation.

Key Features:

  • V<sub>DS (Drain-Source Voltage): The DMN3051LDM-7 can handle a maximum drain-source voltage of 30V, ensuring robust performance for a variety of circuits.
  • I<sub>D (Continuous Drain Current): It offers a high continuous drain current of 4.2A at 25°C, which allows for efficient current handling in power conversion applications.
  • R<sub>DS(on) (On-Resistance): With a low on-resistance of just 70mΩ at V<sub>GS = 10V, this MOSFET ensures minimal power loss and improved efficiency.
  • Fast Switching Speed: The fast switching capabilities make it suitable for high-frequency applications, reducing switching losses and enhancing overall performance.
  • RoHS Compliant: The DMN3051LDM-7 is RoHS compliant, meeting environmental standards and ensuring suitability for use in green products.

Applications:

  • Power Management
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives

The DMN3051LDM-7 from Diodes Incorporated is an excellent choice for designers who need a reliable and efficient N-channel MOSFET. Its combination of low on-resistance, high drain current capability, and compact form factor make it a versatile component for a variety of electronic designs. Whether you're working on power supplies, motor control circuits, or portable electronic devices, the DMN3051LDM-7 is designed to deliver top-notch performance with consistent reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1445 $50.5750
740+ $0.1352 $100.0480
1,150+ $0.1306 $150.1900
1,655+ $0.1212 $200.5860
2,145+ $0.1166 $250.1070
2,685+ $0.1119 $300.4515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,750 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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