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DMN30H4D0LFDE-7

Part No DMN30H4D0LFDE-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V .55A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 7.6nC @ 10V
Max Input Capacitance 187.3pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 630mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 300mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-DFN2020-6 (Type E)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1033760-DMN30H4D0LFDE-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN30H4D0LFDE-7 CAD Model

Description

Introducing the DMN30H4D0LFDE-7 MOSFET from Diodes Incorporated

The DMN30H4D0LFDE-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power control and is suitable for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive environments.

Constructed with advanced trench technology, the DMN30H4D0LFDE-7 achieves excellent RDS(on) performance, which ensures lower conduction losses and improves overall energy efficiency. This feature, combined with its low gate charge (Qg), makes it an optimal solution for high-frequency switching applications where power efficiency is crucial.

The DMN30H4D0LFDE-7 is housed in a robust PowerDI®3333-8 package, which not only offers a compact footprint but also provides superior thermal performance. This packaging is designed to handle high levels of thermal stress, ensuring reliability and longevity, even under demanding conditions. The device is rated for a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 25A at 25°C, making it capable of driving significant loads.

Safety and reliability are key concerns in any electronic component. The DMN30H4D0LFDE-7 addresses these concerns with features like its low threshold voltage (VGS(th)) for ease of drive, fast switching speeds to minimize energy loss during power conversion, and its ability to withstand high pulsed current. Furthermore, it is fully RoHS compliant, ensuring that it meets the latest environmental standards for hazardous substances.

Whether you're designing power supplies, DC-DC converters, or looking to enhance the efficiency of your motor drives, the DMN30H4D0LFDE-7 from Diodes Incorporated is a choice that combines performance, efficiency, and reliability. Its advanced features and robust design make it an essential component for engineers looking to optimize their power management systems.

For detailed specifications, application notes, and additional resources, visit the Diodes Incorporated website or contact their technical support team for personalized assistance with your design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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