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DMN32D4SDW-13

Part No DMN32D4SDW-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.65A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 2001591-DMN32D4SDW-13
Win Source Part Number Cross
Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 400mOhm @ 250mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian DMN32D4SDW-13 CAD Model

Description

Product Overview: DMN32D4SDW-13 from Diodes Incorporated

The DMN32D4SDW-13 is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This product is an exemplary solution for a variety of applications that require efficient power switching and management, particularly in compact and energy-sensitive environments.

Featuring a miniature surface-mount package, specifically the SOT-363, the DMN32D4SDW-13 is optimized for space-constrained applications. The small form factor does not compromise its capability, as it offers a continuous drain current (ID) of 1.2A at a maximum operating temperature of 150°C. The device's low on-state resistance (RDS(ON)) ensures high efficiency and minimizes power losses during operation, which is crucial for maintaining the integrity and longevity of electronic systems.

With a drain-source voltage (VDS) of 30V, the DMN32D4SDW-13 can comfortably handle moderate voltage applications while providing the necessary protection against voltage spikes and surges. This feature, combined with its fast switching speed, makes it an ideal choice for power management in portable electronics, battery management systems, and high-efficiency power supplies.

The DMN32D4SDW-13 also boasts impressive thermal performance due to its low thermal resistance, allowing for better heat dissipation and stable operation even under high switching frequencies or load conditions. This, in turn, contributes to the reliability and durability of the end product, ensuring customer satisfaction and reduced maintenance costs.

Diodes Incorporated has designed the DMN32D4SDW-13 with a focus on environmental sustainability. It is RoHS compliant, meaning it is free from hazardous substances such as lead, mercury, and cadmium, aligning with global efforts to reduce the environmental impact of electronic components.

In summary, the DMN32D4SDW-13 from Diodes Incorporated is a versatile and efficient power management solution that combines compact size, high performance, and environmental responsibility. It is a suitable choice for designers looking to enhance the power efficiency and reliability of their electronic systems without sacrificing space or increasing complexity.

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