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DMN3730UFB4-7-55

Part No DMN3730UFB4-7-55
Manufacturer Diodes Incorporated
Catalog OEM Parts (C - E)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1055770-DMN3730UFB4-7-55
Categories OEM Parts(C-E)
Manufacturer Diodes Incorporated
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian DMN3730UFB4-7-55 CAD Model

Description

Diodes Incorporated DMN3730UFB4-7-55: High-Performance MOSFET

The DMN3730UFB4-7-55 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is designed to offer high efficiency and power density for a wide range of applications, ensuring optimal performance in compact and power-sensitive designs.

Constructed with advanced trench technology, the DMN3730UFB4-7-55 boasts a low on-resistance (RDS(on)) which significantly reduces conduction losses. This feature is particularly beneficial in applications where high switching frequencies are required, as it minimizes the heat generated, thereby enhancing system reliability and longevity.

The device operates with a drain-source voltage (VDS) of up to 30V and continuous drain current (ID) of 6.5A at 25°C, making it robust for handling high power levels. Its power dissipation (PD) is rated at 1.25W, which is a testament to its ability to manage power efficiently without compromising performance.

With a compact footprint, the DMN3730UFB4-7-55 comes in an ultra-small leadless DFN2020 package, measuring just 2.0mm x 2.0mm. This space-saving design is ideal for portable and space-constrained applications such as smartphones, tablets, and other personal electronics where efficiency and size are critical considerations.

Moreover, the DMN3730UFB4-7-55 features fast switching speeds, which are essential for high-frequency circuits, reducing switching losses and improving overall system efficiency. The device also offers low threshold voltage (VGS(th)), which ensures that it can be driven at lower gate voltages, further conserving power in the system.

For designers and engineers looking for a reliable MOSFET that combines efficiency, power density, and performance, the DMN3730UFB4-7-55 from Diodes Incorporated is an excellent choice. Its robustness and compact size make it a versatile component suitable for a broad range of electronic applications, from power management to switching circuits.

Whether you are designing power supplies, DC-DC converters, or load switches, the DMN3730UFB4-7-55 delivers the high performance and reliability that modern electronic devices demand.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,135+ $0.0442 $50.1670
2,420+ $0.0414 $100.1880
3,750+ $0.0400 $150.0000
5,395+ $0.0371 $200.1545
7,005+ $0.0357 $250.0785
8,750+ $0.0343 $300.1250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,080 pieces
MOQ: 1135 pcs
Order Increment : 1 pcs
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