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DMN4800LSS-13

Part No DMN4800LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 8SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 9.47nC @ 5V
Max Input Capacitance 798pF @ 10V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.46W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 014445-DMN4800LSS-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN4800LSS-13 CAD Model

Description

DMN4800LSS-13 Dual N-Channel Enhancement Mode MOSFET

The DMN4800LSS-13 from Diodes Incorporated is a high-performance, dual N-Channel enhancement mode field-effect transistor (MOSFET) designed for efficient power management in a compact package. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient solutions for a wide range of applications, including power supplies, DC-DC converters, and load switches.

Key Features

  • Low On-Resistance: The DMN4800LSS-13 features a low on-resistance (R<sub>DS(on)), which minimizes power loss and improves efficiency, making it an excellent choice for applications requiring high performance with minimal energy waste.
  • High Continuous Drain Current: This MOSFET supports a high continuous drain current (I<sub>D), allowing it to handle significant power levels and making it suitable for demanding power applications.
  • PowerDI®3333-8 Package: Enclosed in a PowerDI®3333-8 package, the DMN4800LSS-13 offers a compact footprint while providing excellent thermal performance, ensuring reliability even under high power operation.
  • Low Threshold Voltage: The device has a low threshold voltage (V<sub>GS(th)), which allows it to turn on at lower gate voltages, thus enhancing its usability in low-voltage applications.
  • Fast Switching Speed: With its fast switching speed, the DMN4800LSS-13 can operate efficiently at high frequencies, which is crucial for modern electronic circuits where speed is often a critical factor.

Applications

  • Power Management
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing

The DMN4800LSS-13 is designed to meet the stringent requirements of modern electronic devices. With its dual N-Channel configuration, it offers designers the flexibility to control two separate circuits or to use them in a complementary manner for more complex designs. Its robust thermal and electrical characteristics make it an ideal choice for optimizing power usage in portable and stationary applications, where efficiency and space-saving are of paramount importance.

Overall, the DMN4800LSS-13 is a versatile and reliable component that exemplifies Diodes Incorporated's dedication to delivering high-quality, energy-conscious products to the electronics market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1554 $50.5050
785+ $0.1275 $100.0875
1,215+ $0.1236 $150.1740
1,675+ $0.1196 $200.3300
2,165+ $0.1156 $250.2740
2,900+ $0.1036 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,348 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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