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DMN5040LSS-13

Part No DMN5040LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 5.2A 8SO T&R 2
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 50 V 5.2A (Ta) 1.3W (Ta) Surface Mount 8-SO
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Family Name DMN5040
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity High
Supply and Demand Status Balance
Win Source Part Number 917157-DMN5040LSS-13
Ultra Librarian 3D Model Ultra Librarian DMN5040LSS-13 CAD Model

Description

Diodes Incorporated DMN5040LSS-13 MOSFET

The DMN5040LSS-13 is a high-performance, N-Channel enhancement mode Field-Effect Transistor (FET) from Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to provide efficient power conversion and switching with low on-resistance and a high continuous drain current. It is a versatile component suitable for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive markets.

Key Features

  • Low On-Resistance: The DMN5040LSS-13 features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency, making it ideal for high-efficiency power applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant power levels, which is essential for applications that require robust power handling capabilities.
  • High-Speed Switching: The fast switching speed of the DMN5040LSS-13 is beneficial for applications that require rapid on-off cycles, contributing to improved performance and reduced switching losses.
  • Low Threshold Voltage: The device operates at a low gate threshold voltage (V<sub>GS(th)), which allows for low-voltage drive capability and is suitable for low-power applications.
  • Advanced Packaging: Enclosed in a space-saving SOP-8 package, the DMN5040LSS-13 is designed for compact circuit designs without compromising performance.

Applications

  • DC/DC Converters
  • Power Management Systems
  • Load Switches
  • Battery Management
  • Motor Control Circuits
  • Automotive Electronics

The DMN5040LSS-13 MOSFET from Diodes Incorporated is a testament to the company's commitment to providing high-quality, reliable semiconductor solutions. Its combination of low on-resistance, high current handling, and fast switching capabilities make it a preferred choice for designers looking to optimize their power circuitry for both performance and size. Whether you are developing power supplies, inverters, or any other power-intensive applications, the DMN5040LSS-13 is engineered to meet the stringent requirements of modern electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2346 $58.6500
600+ $0.1926 $115.5600
930+ $0.1866 $173.5380
1,280+ $0.1806 $231.1680
1,655+ $0.1746 $288.9630
2,215+ $0.1565 $346.6475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,400 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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