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DMN601DWK-7

Part No DMN601DWK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R / MOSFET 2N-CH 60V 0.305A SOT-363
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 305mA
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 200mW
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 014454-DMN601DWK-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMN601DWK
Introduction Date August 26, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMN601DWK-7 CAD Model

Description

Introducing the DMN601DWK-7 Dual N-Channel Enhancement Mode MOSFET

The DMN601DWK-7 is a state-of-the-art dual N-Channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is engineered to deliver high efficiency and reliability for a wide range of applications, making it an ideal choice for designers looking to optimize their power management solutions.

Key Features

  • Low On-Resistance: The DMN601DWK-7 boasts an impressively low on-resistance, which minimizes conduction losses and enhances overall efficiency.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency applications, contributing to better performance and reduced energy consumption.
  • Dual MOSFET Configuration: The dual N-Channel design allows for flexibility in circuit design, providing the convenience of two MOSFETs in a single package.
  • Small Footprint: Encased in a compact SOT-363 package, the DMN601DWK-7 is optimized for space-constrained applications without compromising on power and performance.

Applications

The DMN601DWK-7 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Portable Electronic Devices

Technical Specifications

With a continuous drain current (ID) of up to 0.46 A and a drain-source voltage (VDS) of 60 V, the DMN601DWK-7 is designed to handle significant power levels. The device also features a low gate threshold voltage (VGS(th)) of 1.2 V (typ.), which allows for easy drive capability.

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMN601DWK-7 is no exception; it is built to offer consistent performance and is subjected to rigorous testing to ensure it meets the demands of various industrial, commercial, and consumer applications.

Whether you're designing power supplies, chargers, or any other power-sensitive electronics, the DMN601DWK-7 from Diodes Incorporated provides a compact, efficient, and reliable solution for your N-Channel MOSFET needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
365+ $0.1379 $50.3335
775+ $0.1291 $100.0525
1,205+ $0.1248 $150.3840
1,725+ $0.1160 $200.1000
2,240+ $0.1117 $250.2080
2,800+ $0.1073 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 365 pcs
Order Increment : 1 pcs
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