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DMN6070SSD-13

Part No DMN6070SSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 3.3A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.3A
Maximum Rds On at Id,Vgs 80 mOhm @ 12A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12.3nC @ 10V
Max Input Capacitance 588pF @ 30V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1033789-DMN6070SSD-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN6070SSD-13 CAD Model

Description

Introducing the DMN6070SSD-13: High-Performance N-Channel MOSFET by Diodes Incorporated

The DMN6070SSD-13 is a cutting-edge N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of semiconductors. This MOSFET is part of their extensive portfolio of power management devices, offering high efficiency and reliability for a wide range of applications.

Constructed with advanced trench technology, the DMN6070SSD-13 boasts a low on-resistance (R<sub>DS(on)) of just 50mΩ at V<sub>GS = 10V. This low R<sub>DS(on) ensures minimal power loss and heat generation, making it an excellent choice for power-intensive applications. The device is also characterized by a 60V drain-source breakdown voltage (V<sub>DSS), which provides a good safety margin for most low to medium voltage applications.

The DMN6070SSD-13 is designed to handle continuous drain currents up to 6.5A, making it capable of powering a wide range of electronic devices. Its high pulsed current capability also makes it suitable for applications with high transient loads. The MOSFET comes in a compact, surface-mount SOP-8 package, which is ideal for space-constrained applications while also providing good thermal performance.

With its fast switching speed and low gate charge (Q<sub>g), the DMN6070SSD-13 is optimized for high-frequency switching applications. This makes it a perfect fit for DC-DC converters, power management systems, and other power-switching circuits. Its robustness is further enhanced by its 20V gate-source voltage (V<sub>GS), which provides a wide safety margin for gate-drive voltages.

The DMN6070SSD-13 is also designed with the environment in mind. It is RoHS compliant, ensuring that it meets the latest environmental standards and regulations. This commitment to environmental responsibility makes the DMN6070SSD-13 a sustainable choice for eco-conscious businesses and consumers alike.

Overall, the DMN6070SSD-13 from Diodes Incorporated represents a blend of performance, efficiency, and compact form factor, making it an ideal solution for designers looking to optimize their power management systems without compromising on space or power handling capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7331 $51.3170
170+ $0.6016 $102.2720
260+ $0.5828 $151.5280
355+ $0.5640 $200.2200
460+ $0.5452 $250.7920
615+ $0.4888 $300.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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