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DMN6040SSD-13

Part No DMN6040SSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 5A 8-Pin SO T/R / MOSFET 2N-CH 60V 5A 8SO
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22.4nC @ 10V
Max Input Capacitance 1287pF @ 25V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1033783-DMN6040SSD-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN6040SSD
Introduction Date May 08, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DMN6040SSD-13 CAD Model

Description

DMN6040SSD-13 N-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMN6040SSD-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient, compact, and reliable components for a wide range of electronic applications. It is particularly well-suited for use in power management tasks within both commercial and industrial equipment.

Encased in a robust and compact SOP-8 package, the DMN6040SSD-13 boasts a 60V drain-source voltage (V<sub>DS), making it an excellent choice for systems that require a moderate voltage range while maintaining high efficiency and fast switching. The device's continuous drain current (I<sub>D) is rated at 8.5A at 25°C, ensuring that it can handle significant power without overheating, thanks to its low on-resistance (R<sub>DS(on)) of only 40mΩ at V<sub>GS = 10V. This low on-resistance means that the MOSFET operates with minimal power loss, contributing to the overall efficiency of the system in which it is deployed.

The DMN6040SSD-13 also features fast switching speeds, which are crucial for applications that require rapid power regulation, such as DC-DC converters, power supplies, and motor control circuits. The device's body diode exhibits a low reverse recovery time and charge, which is beneficial in applications where switching noise and efficiency are critical factors.

For protection and longevity, this MOSFET includes built-in electrostatic discharge (ESD) protection, ensuring that it remains reliable even in environments where ESD events may occur. The DMN6040SSD-13 is also characterized by its low threshold voltage, making it compatible with logic-level gate drive circuits, which simplifies the design of control interfaces.

In summary, the DMN6040SSD-13 from Diodes Incorporated is a versatile, efficient, and robust N-Channel MOSFET suitable for a range of power management applications. Its combination of high voltage capability, low on-resistance, fast switching, and ESD protection makes it an ideal choice for designers looking to optimize their power circuits for performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2620 $51.0900
470+ $0.2150 $101.0500
725+ $0.2083 $151.0175
995+ $0.2015 $200.4925
1,285+ $0.1948 $250.3180
1,720+ $0.1747 $300.4840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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