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DMN6068LK3-13

Part No DMN6068LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.3nC @ 10V
Max Input Capacitance 502pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.12W (Ta)
Maximum Rds On at Id,Vgs 68 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033787-DMN6068LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN6068LK3-13 CAD Model

Description

The DMN6068LK3-13 from Diodes Incorporated is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed for a wide variety of power management and switching applications. This MOSFET is part of Diodes Incorporated's extensive range of semiconductor products and is known for its efficiency and reliability.

The DMN6068LK3-13 features a drain-source voltage (V<sub>DS) of 60V, which makes it suitable for high voltage operations. It offers a continuous drain current (I<sub>D) of 30A, providing significant current handling capability for a multitude of applications. The product comes in a compact DPAK (TO-252) package, which is designed to save space on printed circuit boards while still offering excellent thermal performance.

With a low on-resistance (R<sub>DS(on)) of just 8.5 mΩ at V<sub>GS = 10V, the DMN6068LK3-13 ensures high efficiency, which is critical for minimizing power losses in electronic circuits. This low R<sub>DS(on) also leads to reduced heat generation, thus improving the overall lifespan and reliability of the device.

The DMN6068LK3-13 also features fast switching speed, which is an essential attribute for applications that require high-speed operation, such as DC-DC converters, power supplies, and motor controls. Its fast switching characteristics also contribute to increased efficiency by reducing transition losses.

This MOSFET is RoHS compliant, meaning it meets the European Union's directives on the restriction of hazardous substances. As such, it is designed to be environmentally friendly and safe for use in consumer electronics. The DMN6068LK3-13 is also characterized by its ruggedness and ability to withstand high energy pulses in the avalanche and commutation modes, which is a testament to its durability and robustness in challenging conditions.

In summary, the DMN6068LK3-13 from Diodes Incorporated is a versatile, high-efficiency MOSFET suitable for a variety of applications where power management is critical. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for designers looking to optimize their power circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3027 $51.4590
405+ $0.2484 $100.6020
625+ $0.2406 $150.3750
860+ $0.2329 $200.2940
1,115+ $0.2251 $250.9865
1,490+ $0.2018 $300.6820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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