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DMN6069SFG-13

Part No DMN6069SFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 5.6A POWERDI333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 5.6A (Ta), 18A (Tc) 930mW (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN6069
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869024-DMN6069SFG-13
Ultra Librarian 3D Model Ultra Librarian DMN6069SFG-13 CAD Model

Description

Product Overview: DMN6069SFG-13

The DMN6069SFG-13 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed to deliver efficiency and power in a compact package. This component is part of Diodes Incorporated's extensive range of MOSFETs that cater to a wide array of applications, including power management, load switching, and motor control in consumer, industrial, and automotive markets.

Key Features

  • Low On-Resistance: The device boasts a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), the DMN6069SFG-13 can handle significant power, making it suitable for high-power applications.
  • PowerDI5060-8 Package: Encased in a PowerDI5060-8 package, it offers a compact footprint while providing excellent thermal performance.
  • Fast Switching Speed: The MOSFET's fast switching speed is ideal for high-frequency applications, contributing to better performance and reduced switching losses.

Electrical Characteristics

  • Drain-Source Voltage (V<sub>DS): The maximum drain-source voltage is specified at 60V, suitable for various circuit designs.
  • Gate-Source Voltage (V<sub>GS): The gate-source voltage rating ensures compatibility with standard drive voltages.
  • Maximum Power Dissipation: It has a notable power dissipation capability, which is a testament to its ability to handle higher power applications without overheating.

Applications

The DMN6069SFG-13 is versatile and can be used in a range of applications:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMN6069SFG-13 is built to meet rigorous standards, ensuring reliability and performance consistency. It is RoHS compliant and lead-free, catering to environmentally conscious design requirements.

With its robust design and electrical efficiency, the DMN6069SFG-13 is an excellent choice for designers seeking a reliable N-Channel MOSFET that does not compromise on power or performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2681 $58.9820
525+ $0.2201 $115.5525
815+ $0.2131 $173.6765
1,120+ $0.2063 $231.0560
1,450+ $0.1994 $289.1300
1,940+ $0.1788 $346.8720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,567 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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