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DMN6075S-7

Part No DMN6075S-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12.3nC @ 10V
Max Input Capacitance 606pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033790-DMN6075S-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN6075S-7 CAD Model

Description

Product Overview: DMN6075S-7

The DMN6075S-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) from Diodes Incorporated. This MOSFET is designed for a wide range of applications, offering a balance of efficient power handling and low on-resistance. It's a suitable choice for power management tasks in both commercial and industrial electronic devices.

Key Features

  • Low On-Resistance: The DMN6075S-7 features very low on-resistance, which translates to reduced power loss and improved efficiency in operation. This makes it ideal for high-efficiency power supply designs.
  • High Continuous Drain Current: With a high continuous drain current, this MOSFET can handle significant power loads, making it suitable for demanding applications.
  • Low Threshold Voltage: The low threshold voltage ensures that the device can be driven at lower gate voltages, which can be beneficial in low-voltage applications.
  • Fast Switching Speed: The fast switching characteristics of the DMN6075S-7 enable efficient operation at high frequencies, which is crucial for applications such as DC-DC converters.

Applications

The versatility of the DMN6075S-7 allows it to be used in a variety of applications, including:

  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Load Switching
  • Battery Management
  • Computing and Storage Platforms

Package and Reliability

The DMN6075S-7 comes in a compact SOT-23 package, which is ideal for space-constrained applications. This package is not only space-efficient but also offers reliable thermal performance for better device longevity. The MOSFET is also RoHS compliant, ensuring that it meets current environmental standards for electronic components.

Conclusion

With its combination of high efficiency, fast switching, and robust thermal performance, the DMN6075S-7 from Diodes Incorporated is an excellent choice for designers looking to optimize their power management systems. Whether it's for industrial, commercial, or consumer electronics, this MOSFET provides the reliability and performance required for today's demanding electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
605+ $0.0832 $50.3360
1,285+ $0.0779 $100.1015
1,995+ $0.0753 $150.2235
2,860+ $0.0700 $200.2000
3,710+ $0.0674 $250.0540
4,630+ $0.0648 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900,000 pieces
MOQ: 605 pcs
Order Increment : 1 pcs
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