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DMN66D0LT-7

Part No DMN66D0LT-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115MA SOT-523 / Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Input Capacitance 23pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 115mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Dimension SOT-523
Win Source Part Number 014462-DMN66D0LT-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN66D0LT
Introduction Date September 19, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMN66D0LT-7 CAD Model

Description

Product Overview: DMN66D0LT-7 - Diodes Incorporated

The DMN66D0LT-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is part of Diodes Incorporated's extensive product lineup, renowned for their reliability and efficiency. The DMN66D0LT-7 is specifically engineered to address the requirements of a wide range of applications, including load switch, power management, and various other circuits where a high-efficiency MOSFET is crucial.

Key Features

  • Low On-Resistance: The DMN66D0LT-7 boasts a low on-resistance, which minimizes conduction losses and enhances overall device efficiency, making it an excellent choice for power-sensitive applications.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides quick response times, contributing to improved performance in high-frequency circuits.
  • Low Threshold Voltage: The device operates at a low threshold voltage, ensuring it can be controlled with lower gate voltages, which is beneficial for battery-operated devices and low-voltage circuits.
  • Small Package Size: Encased in a compact SOT-523 package, the DMN66D0LT-7 is ideal for space-constrained applications, without compromising on power and performance.

Electrical Characteristics

The DMN66D0LT-7 features a drain-source voltage (VDS) of 60V, which ensures it can handle moderate voltage levels effectively. The continuous drain current (ID) is rated at 280mA, providing sufficient current handling capability for a variety of electronic designs. Moreover, the device's power dissipation is rated at 250mW, making it suitable for applications where power efficiency is a priority.

Applications

With its robust electrical characteristics and compact form factor, the DMN66D0LT-7 is versatile for use in a variety of applications, including:

  • Power Management Solutions
  • DC-DC Converters
  • Battery Powered Devices
  • Load Switching
  • Portable Electronics
  • Motor Drive Controls

The DMN66D0LT-7 from Diodes Incorporated is a testament to the company's commitment to providing high-quality, efficient, and versatile components for the electronics industry. Whether for consumer electronics, industrial applications, or innovative power solutions, this N-channel MOSFET stands out as a reliable and practical choice for designers and engineers alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
665+ $0.0757 $50.3405
1,615+ $0.0621 $100.2915
2,495+ $0.0602 $150.1990
3,435+ $0.0583 $200.2605
4,445+ $0.0563 $250.2535
5,945+ $0.0505 $300.2225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,510 pieces
MOQ: 665 pcs
Order Increment : 1 pcs
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