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DMP1055USW-7

Part No DMP1055USW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3.8A SOT363 / P-Channel 12 V 3.8A (Ta) 660mW Surface Mount SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3.8A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1028 pF @ 6 V
Power Dissipation (Max) 660mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package SOT-363
Case / Package 6-TSSOP, SC-88, SOT-363
Base Product Number DMP1055
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 1324109-DMP1055USW-7
Ultra Librarian 3D Model Ultra Librarian DMP1055USW-7 CAD Model

Description

Introducing the DMP1055USW-7 P-Channel MOSFET from Diodes Incorporated

The DMP1055USW-7 is a high-performance, P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is designed to deliver efficient power management and switching with low on-resistance and a compact form factor, making it an excellent choice for a wide range of applications.

Key Features

  • Low On-Resistance: The DMP1055USW-7 boasts an exceptionally low on-resistance of just 320 mΩ at VGS = -4.5V, which translates to reduced power loss and improved efficiency in operation.
  • High Power Dissipation: With a power dissipation of 1.4W, this MOSFET can handle significant levels of power, making it suitable for demanding environments.
  • Advanced Packaging: Encased in a small SOT-323 package, the DMP1055USW-7 is designed for space-constrained applications without compromising on performance.
  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be easily controlled in low voltage applications.
  • RoHS Compliant: Adhering to environmental standards, this MOSFET is RoHS compliant, reflecting Diodes Incorporated's commitment to environmentally friendly products.

Applications

The versatility of the DMP1055USW-7 makes it suitable for a broad spectrum of applications, including:

  • Power Management Circuits
  • Load Switching
  • Battery Management Systems
  • DC-DC Converters
  • Portable Electronic Devices

Product Summary

Parameter Value Configuration Single Channel Type P-Channel Drain-Source Voltage (Vds) -12V Continuous Drain Current (Id) -1.3A Power Dissipation (Pd) 1.4W Package SOT-323

With its robust performance and compact size, the DMP1055USW-7 from Diodes Incorporated stands as a top choice for designers looking to enhance their power management systems with a reliable and efficient P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1658 $58.0300
850+ $0.1361 $115.6850
1,315+ $0.1318 $173.3170
1,815+ $0.1275 $231.4125
2,345+ $0.1234 $289.3730
3,135+ $0.1106 $346.7310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,834 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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