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DMT6009LFG-7

Part No DMT6009LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 11A (Ta), 34A (Tc) 2.08W (Ta), 19.2W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT6009
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMT6009LFG-7DIDKR, DMT6009LFG-7DITR, DMT6009LFG-7DICT
Quantity per package 2000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869148-DMT6009LFG-7
Ultra Librarian 3D Model Ultra Librarian DMT6009LFG-7 CAD Model

Description

DMT6009LFG-7 - A High-Efficiency MOSFET by Diodes Incorporated

The DMT6009LFG-7 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (MOSFET) developed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including power management, load switching, and DC-DC conversion in the modern electronic landscape.

Key Features

  • Low On-Resistance: The DMT6009LFG-7 boasts an exceptionally low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall efficiency in circuits where it is deployed.
  • High Continuous Drain Current: With a robust continuous drain current (I<sub>D) rating, this MOSFET can handle high current applications with ease, making it suitable for demanding environments.
  • PowerDI®5060-8 Package: Encased in the innovative PowerDI®5060-8 package, the DMT6009LFG-7 offers excellent thermal performance and a compact footprint, ideal for space-constrained applications.
  • Halogen and Lead-Free: In line with modern environmental standards, this product is halogen and lead-free, ensuring compliance with current RoHS directives and promoting an eco-friendly approach to electronics design.

Applications

The versatility of the DMT6009LFG-7 allows it to be integrated into a multitude of electronic systems. Some of its common applications include:

  • Power supplies and adapters
  • DC-DC converters
  • Battery management systems
  • Load switches
  • Motor drives and controllers

Technical Specifications

The DMT6009LFG-7 operates with a maximum drain-source voltage (V<sub>DS) of 60V, ensuring it can withstand high voltage applications. Its maximum R<sub>DS(on) is as low as 6.5mΩ at V<sub>GS = 10V, which translates to reduced power losses during operation. The device also features a fast switching speed, enhancing performance in high-frequency circuits.

Diodes Incorporated's commitment to quality and performance is evident in the DMT6009LFG-7 MOSFET. Its robust design, combined with high efficiency and thermal performance, makes it an ideal choice for engineers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3306 $51.2430
370+ $0.2713 $100.3810
575+ $0.2628 $151.1100
790+ $0.2544 $200.9760
1,020+ $0.2459 $250.8180
1,365+ $0.2204 $300.8460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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