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DMT6015LFV-13

Part No DMT6015LFV-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V PWRDI3333 / N-Channel 60 V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8 (Type UX)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.9 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1103 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN
Base Product Number DMT6015
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354216-DMT6015LFV-13
Ultra Librarian 3D Model Ultra Librarian DMT6015LFV-13 CAD Model

Description

Introducing the DMT6015LFV-13 MOSFET from Diodes Incorporated

The DMT6015LFV-13 is a high-performance, P-Channel enhancement mode field-effect transistor (MOSFET) engineered by the reputable semiconductor manufacturer, Diodes Incorporated. This device is designed to deliver efficient power management and signal processing in a wide array of applications. With its compact form factor and robust design, the DMT6015LFV-13 is an ideal choice for space-constrained and power-sensitive applications.

Key Features

  • Low On-Resistance: The DMT6015LFV-13 boasts a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power dissipation during operation.
  • High Power Dissipation: With a high maximum power dissipation, this MOSFET can handle significant power levels, making it suitable for demanding applications.
  • Advanced Packaging: Housed in a PowerDI3333-8 package, the DMT6015LFV-13 offers excellent thermal performance and a small footprint, perfect for compact circuit designs.
  • High Threshold Voltage: The device features a high threshold voltage, which ensures reliable operation and reduces the risk of unintentional turn-on.

Applications

The versatile nature of the DMT6015LFV-13 allows it to be used in a multitude of applications, including:

  • Power management circuits
  • Load switches
  • Battery protection
  • DC-DC converters
  • Motor control systems

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMT6015LFV-13 is no exception. It is manufactured to meet high standards for reliability and performance, ensuring that it can withstand the rigors of both industrial and consumer applications.

Environmental Compliance

In line with modern environmental standards, the DMT6015LFV-13 is RoHS compliant, meaning it is free from hazardous substances such as lead, cadmium, and mercury. This compliance ensures that the product is suitable for use in environmentally sensitive applications and aids in meeting global environmental regulations.

Overall, the DMT6015LFV-13 from Diodes Incorporated is a superior choice for designers seeking a reliable, high-performance P-Channel MOSFET. Its combination of low on-resistance, high power dissipation, and compact packaging makes it a versatile component for a wide range of electronic designs.

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