DMT6017LDV-13: High-Efficiency MOSFET from Diodes Incorporated

The DMT6017LDV-13 is a state-of-the-art N-channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This component is well-suited for a variety of applications, including power management, load switching, and DC-DC conversion in a wide range of electronic devices.

Key Features

• Low On-Resistance: The DMT6017LDV-13 boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 24 mΩ at V<sub>GS = 10 V, which translates to reduced power losses and improved efficiency in operation.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of up to 60 A, this MOSFET can handle high current applications with ease, making it ideal for power-intensive circuits.
• PowerDI5060-8 Package: The device is housed in a compact PowerDI5060-8 package, which is optimized for thermal performance and space-saving on PCBs.
• Lead-Free and RoHS Compliant: In line with environmental standards, the DMT6017LDV-13 is fully lead-free and RoHS compliant, minimizing the ecological footprint of your products.

Applications

The versatile nature of the DMT6017LDV-13 MOSFET makes it suitable for a diverse range of applications, including:

• Power supply circuits
• DC-DC converters
• Motor drives
• Battery management systems
• Load switches
• Power tools
• Computing and server power systems

Technical Specifications

The DMT6017LDV-13 is a testament to Diodes Incorporated's commitment to providing high-performance, reliable semiconductor solutions. Its combination of low on-resistance, high current capability, and compact packaging makes it an excellent choice for designers looking to enhance the efficiency and performance of their electronic products.