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DMT8008LSS-13

Part No DMT8008LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 61V-100V SO-8 / N-Channel 80 V 13A (Ta), 32A (Tc) 1.3W (Ta)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta) , 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 40 V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Base Product Number DMT8008
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350935-DMT8008LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT8008LSS-13 CAD Model

Description

DMT8008LSS-13: A High-Performance MOSFET from Diodes Incorporated

The DMT8008LSS-13 is a state-of-the-art metal-oxide-semiconductor field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to providing efficient and reliable solutions for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMT8008LSS-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant amounts of current, making it suitable for power-intensive applications.
  • Advanced Packaging: Encased in a robust and compact 8-pin SOP package, the DMT8008LSS-13 ensures a minimal footprint on circuit boards without compromising performance.
  • Low Gate Charge: The low gate charge (Q<sub>G) characteristic of this device allows for fast switching speeds, which is critical for high-frequency applications.

Applications

The versatile nature of the DMT8008LSS-13 makes it an ideal choice for a variety of applications, including:

  • Power management systems
  • DC-DC converters
  • Battery-powered devices
  • Motor control circuits
  • Load switching

Performance and Reliability

Diodes Incorporated has engineered the DMT8008LSS-13 to meet the rigorous demands of modern electronic devices. The MOSFET's performance is characterized by its fast switching capabilities and thermal stability, ensuring reliable operation even under challenging conditions. The DMT8008LSS-13 is also designed to minimize power losses, which is essential for energy-sensitive applications.

Conclusion

The DMT8008LSS-13 from Diodes Incorporated represents a blend of innovative design, superior performance, and reliability. Whether it's for industrial, consumer, or automotive electronics, this MOSFET is an excellent choice for designers looking to enhance the efficiency and longevity of their electronic systems. Its compact form factor, coupled with its impressive electrical characteristics, makes the DMT8008LSS-13 a valuable component in any modern electronic design.

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