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DMTH3004LK3-13

Part No DMTH3004LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 2370pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033885-DMTH3004LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMTH3004LK3-13 CAD Model

Description

DMTH3004LK3-13 MOSFET by Diodes Incorporated

The DMTH3004LK3-13 is a high-performance, N-channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. It is a testament to the company's commitment to providing power management solutions that meet the stringent requirements of modern electronic devices.

Key Features:

  • Low On-Resistance: The DMTH3004LK3-13 boasts a very low on-resistance (RDS(on)), which ensures high efficiency and minimal power loss during operation, making it an ideal choice for power-sensitive applications.
  • High Continuous Drain Current: With an impressive continuous drain current (ID) capability, this MOSFET can handle high current applications with ease, ensuring reliability even under strenuous conditions.
  • Advanced Packaging: Enclosed in a robust and compact DFN2020-6 (Type D) package, the DMTH3004LK3-13 offers excellent thermal performance and a small footprint, making it suitable for space-constrained applications.
  • High-Speed Switching: The device is designed for fast switching, which is critical in reducing switching losses and improving overall efficiency in applications such as DC-DC converters and motor control circuits.
  • Low Threshold Voltage: The low threshold voltage (VGS(th)) ensures that the MOSFET can be driven at lower gate voltages, which is advantageous for low-voltage applications and helps in reducing power consumption.

Applications:

The DMTH3004LK3-13 is versatile and can be utilized in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Powered Systems
  • Load Switches
  • Power Supply Circuits

Quality and Reliability:

Diodes Incorporated has a reputation for producing high-quality components, and the DMTH3004LK3-13 is no exception. It is built to meet high standards of performance and reliability, ensuring that it can withstand the rigors of industrial and consumer electronics environments.

Whether you are designing power supplies, working on motor control, or developing energy-efficient solutions, the DMTH3004LK3-13 from Diodes Incorporated offers the performance and reliability needed to drive your projects forward.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3973 $51.6490
310+ $0.3260 $101.0600
475+ $0.3158 $150.0050
655+ $0.3056 $200.1680
850+ $0.2954 $251.0900
1,135+ $0.2649 $300.6615
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 64,595 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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