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FZT655TA

Part No FZT655TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 150V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 150V 1A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 200mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 50 @ 500mA, 5V
Maximum Power Dissipation 2W
Frequency - Transition 30MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 016605-FZT655TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name FZT655
Introduction Date October 28, 1997
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FZT655TA CAD Model

Description

The FZT655TA is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for use in a wide range of electronic applications. This transistor is particularly well-suited for high-speed switching and amplification purposes, making it a versatile component for modern electronic circuits.

Featuring a collector-emitter voltage (Vceo) of 60V and a collector current capability of up to 3A, the FZT655TA is capable of handling moderate power levels while maintaining high efficiency. Its power dissipation is rated at 2W, which ensures stable operation under typical usage scenarios. The device's high gain bandwidth product and fast switching speed contribute to its excellent performance in high-frequency applications.

The FZT655TA comes in a compact SOT-223 surface-mount package, which allows for efficient use of PCB space. This packaging is not only space-saving but also conducive to high-volume production environments. The SOT-223 package is designed to offer good thermal performance, which is essential for maintaining reliability and longevity in applications where the transistor may experience elevated temperatures.

Diodes Incorporated has designed the FZT655TA with a focus on reliability. The device features a rugged construction that can withstand harsh conditions and provides a high degree of protection against overcurrent and thermal overload. This makes it an excellent choice for industrial and automotive applications, where reliability and durability are of utmost importance.

In summary, the FZT655TA NPN transistor is a high-quality electronic component that offers a combination of high-speed switching, power handling, and efficient packaging. Its robustness and versatility make it suitable for a diverse range of applications, from power management to signal amplification, in both consumer electronics and industrial systems.

For detailed specifications, application notes, and additional information, engineers and designers are encouraged to consult the datasheet provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5816 $52.3440
210+ $0.4773 $100.2330
325+ $0.4623 $150.2475
450+ $0.4474 $201.3300
580+ $0.4325 $250.8500
775+ $0.3878 $300.5450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,429 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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