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FZT688BTC

Part No FZT688BTC
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 12V 4A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 400mV @ 50mA, 4A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 400 @ 3A, 2V
Maximum Power Dissipation 2W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 1040470-FZT688BTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FZT688BTC CAD Model

Description

The FZT688BTC from Diodes Incorporated is a high-performance bipolar transistor that is designed to meet the needs of a variety of electronic applications. This PNP transistor is part of Diodes Incorporated's extensive range of discrete semiconductor products, known for their reliability and efficiency.

Key Features

  • High Current Capability: The FZT688BTC is capable of handling high continuous collector currents up to -3A, making it suitable for power regulation and switching applications.
  • Low Saturation Voltage: It has a low collector-emitter saturation voltage (V<sub>CE(sat)), which ensures lower power loss and improved efficiency in operation.
  • High Power Dissipation: With a power dissipation of up to 2W, this transistor can handle significant thermal loads, making it ideal for demanding environments.
  • Fast Switching Speed: The device features fast switching times, which is critical for applications requiring rapid signal modulation or switching capabilities.
  • High h<sub>FE: The FZT688BTC offers high current gain (h<sub>FE), which allows for a strong amplification of the input signal.

Applications

The versatility of the FZT688BTC allows it to be used in a wide array of applications, such as:

  • Power management circuits
  • DC-DC converters
  • Battery-powered devices
  • Motor control circuits
  • Signal amplification

Product Specifications

The FZT688BTC is housed in a compact SOT-223 package, which not only saves space on the PCB but also ensures adequate heat dissipation. The device operates within a junction temperature range of -55°C to +150°C, allowing it to perform reliably in extreme conditions. It also features a collector-base voltage (VCBO) of -120V, collector-emitter voltage (VCEO) of -100V, and emitter-base voltage (VEBO) of -5V.

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that adhere to industry standards. The FZT688BTC is no exception, with its design and manufacturing processes aimed at ensuring long-term reliability and performance in your electronic projects.

Ordering Information

To purchase the FZT688BTC or obtain more information about this product, please visit the Diodes Incorporated website or contact an authorized distributor. Ensure that you are getting genuine products by purchasing from reputable sources.

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