Product Overview: MMBF170-7 N-Channel MOSFET

The MMBF170-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed to deliver efficient power management and switching with low on-state resistance. This MOSFET is part of Diodes Incorporated's extensive range of semiconductor products, known for their reliability and innovation.

Key Features

• Device Type: N-Channel MOSFET
• Configuration: Single
• Drain-Source Breakdown Voltage (V<sub>DS): 60V
• Continuous Drain Current (I<sub>D): 500mA
• Power Dissipation (P<sub>D): 350mW
• R<sub>DS(on): Low on-state resistance for improved efficiency
• Package: SOT-23, providing a compact footprint for space-constrained applications

Applications

The MMBF170-7 is suitable for a wide range of applications due to its fast switching speed and energy efficiency. Its typical applications include:

• Power Management
• Load Switch
• Battery Management
• DC-DC Converters
• Motor Drive Control

Performance and Quality

Diodes Incorporated ensures that the MMBF170-7 MOSFET meets rigorous standards for performance and quality. It is designed to provide stable operation over a broad range of temperatures and conditions, making it a reliable choice for both commercial and industrial applications.

Environmental and Regulatory Compliance

The MMBF170-7 MOSFET is compliant with RoHS standards, which means it is free from hazardous substances commonly found in electronic components. This compliance reflects Diodes Incorporated's commitment to environmental responsibility and the production of safer electronic products.

Conclusion

With its robust performance characteristics and compact package, the MMBF170-7 from Diodes Incorporated is an excellent choice for designers looking to optimize their power management and switching applications. Its low on-state resistance and high efficiency make it a valuable component in any power-sensitive design.