The SDM8M100P5-13 is a high-performance, P-Channel MOSFET introduced by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to provide efficient power management and switching functionalities for a wide range of electronic applications.

Key Features

• Device Type: P-Channel MOSFET
• Package: PowerDI® 5
• Drain-Source Voltage (V<sub>DS): -100V
• Continuous Drain Current (I<sub>D): -3.6A
• R<sub>DS(on): 190 mΩ at V<sub>GS = -10V
• Power Dissipation (P<sub>D): 2.5W
• Operating Temperature Range: -55°C to +150°C

Product Advantages

The SDM8M100P5-13 MOSFET is engineered to deliver high efficiency and reliability. With a low on-resistance (R<sub>DS(on)), the device ensures minimal power loss during operation, which is critical for energy-sensitive designs. The MOSFET's -100V drain-source voltage rating provides a robust solution for handling high voltage requirements, making it suitable for a variety of power applications.

Its compact PowerDI® 5 package is optimized for minimal footprint and low profile, which is ideal for space-constrained applications. Additionally, the package is designed for excellent thermal performance, ensuring the device operates within safe temperature ranges under high power conditions.

Applications

The SDM8M100P5-13 is versatile and can be used in a variety of applications, including:

• Power management systems
• Load switches
• Battery management
• DC-DC converters
• Motor drives
• LED lighting

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The SDM8M100P5-13 MOSFET is no exception, undergoing rigorous testing and quality control measures to ensure performance and durability for end-users.

For detailed specifications, technical data, and application support, customers are encouraged to visit the Diodes Incorporated website or contact their support team.