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SDT10A100CT

Part No SDT10A100CT
Manufacturer Diodes Incorporated
Catalog Diodes, Rectifiers - Arrays
Description DIODE SCHOTTKY 100V 5A TO220AB / Diode Array 1 Pair Common Cathode Schottky 100 V 5A Through Hole TO-220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr Diodes Incorporated
Package Tube
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 5A
Voltage - Forward (Vf) (Max) @ If 660 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 50 µA @ 100 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number SDT10
MSL Level Not Applicable
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.10.0080
Other Names SDT10A100CT-ND,SDT10A100CTDI
Standard Package 50
Win Source Part Number 989669-SDT10A100CT
Ultra Librarian 3D Model Ultra Librarian SDT10A100CT CAD Model

Description

Diodes Incorporated SDT10A100CT Dual Trench MOS Barrier Schottky Rectifier

The SDT10A100CT from Diodes Incorporated is a high-performance, dual trench MOS barrier Schottky rectifier designed for applications requiring low power loss and high efficiency. This rectifier is optimized for use in a wide range of electronic circuits, including power supply units, DC-DC converters, lighting circuits, and high-frequency PWM circuits.

Featuring a maximum average rectified current of 10A and a reverse voltage of 100V, the SDT10A100CT is capable of handling significant power and voltage levels, making it suitable for both commercial and industrial applications. The device's low forward voltage drop contributes to reduced power dissipation, thus improving overall system efficiency and reliability.

Constructed with Diodes Incorporated's advanced trench MOS Schottky technology, the SDT10A100CT offers superior thermal performance and a lower profile package. The rectifier comes in a TO-252 (DPAK) package, which is known for its compact footprint and excellent power density. This packaging allows for easy integration into various circuit designs without requiring excessive space.

The device also features a high forward surge capability, which ensures it can withstand transient surges and spikes commonly found in switching power supplies. Additionally, its low reverse leakage current is crucial for maintaining the integrity of the power system by minimizing power loss during reverse bias conditions.

The SDT10A100CT is designed with environmental concerns in mind. It is RoHS compliant, meaning it does not contain hazardous substances commonly found in electronic components. This compliance ensures that the product is suitable for use in environments where such restrictions are in place and reflects Diodes Incorporated's commitment to environmentally responsible manufacturing practices.

In summary, the SDT10A100CT dual trench MOS barrier Schottky rectifier from Diodes Incorporated is a robust, efficient, and reliable component that meets the needs of modern electronic systems. Its advanced features and compact design make it an excellent choice for designers looking to enhance the performance of their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6422 $57.7980
220+ $0.5267 $115.8740
340+ $0.5105 $173.5700
470+ $0.4943 $232.3210
610+ $0.4770 $290.9700
810+ $0.4285 $347.0850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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