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ZVN4310GTA

Part No ZVN4310GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.67A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.67A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 540 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 036842-ZVN4310GTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN4310GTA CAD Model

Description

Introducing the ZVN4310GTA – A High-Performance MOSFET from Diodes Incorporated

The ZVN4310GTA is a cutting-edge N-Channel Enhancement Mode Vertical DMOS FET, meticulously designed and manufactured by Diodes Incorporated. This high-quality MOSFET is a testament to Diodes Incorporated's commitment to providing innovative solutions to meet the ever-evolving demands of the electronics industry. The ZVN4310GTA is tailored for applications requiring a combination of high-speed switching, low on-resistance, and efficient power management.

With its compact SOT-223 package, the ZVN4310GTA offers a space-saving solution without compromising on performance. This makes it an ideal choice for various applications, including but not limited to, power management tasks, load switching, and high-speed line drivers in a broad range of market segments such as consumer electronics, telecommunications, and industrial systems.

Key Features of the ZVN4310GTA:

  • Low On-Resistance: The device boasts an impressively low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: Engineered for high-speed switching applications, the ZVN4310GTA enables faster operation and increased performance in circuits where switching speed is critical.
  • Enhancement Mode: As an enhancement-mode MOSFET, it requires a positive gate voltage to conduct, allowing for precise control over the device's operation and power flow.
  • High Breakdown Voltage: With a high breakdown voltage, this MOSFET can handle significant voltage spikes and surges, ensuring reliability and robustness in challenging environments.
  • Temperature Performance: The ZVN4310GTA is designed to perform reliably over a wide temperature range, making it suitable for applications that may experience temperature fluctuations.

The ZVN4310GTA also includes built-in protection features such as a rugged gate oxide for enhanced durability. Its lead-free, RoHS-compliant construction demonstrates Diodes Incorporated's commitment to environmental sustainability without sacrificing quality or performance.

Whether you're designing power supplies, motor controllers, or any other application that demands high efficiency and reliability, the ZVN4310GTA from Diodes Incorporated is an excellent choice. Its superior electrical characteristics ensure that your designs will meet the highest standards of performance and energy efficiency.

For detailed specifications and application notes, engineers and designers are encouraged to consult the comprehensive datasheets and support documentation provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,430 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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