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ZVP3306A

Part No ZVP3306A
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 160MA TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Bulk
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Input Capacitance 50pF @ 18V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 14 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA)
Win Source Part Number 1120330-ZVP3306A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVP3306A CAD Model

Description

Introducing the ZVP3306A P-Channel MOSFET by Diodes Incorporated

The ZVP3306A is a high-quality P-Channel Enhancement Mode Vertical DMOS FET designed and manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and reliable components for a wide range of electronic applications.

With its compact SOT-223 packaging, the ZVP3306A offers a space-saving solution for your circuit designs without compromising on performance. It is capable of withstanding a continuous drain current (ID) of -230mA and has a low threshold voltage, ensuring that it can be easily controlled by logic-level voltages. This makes the ZVP3306A an excellent choice for interfacing with microcontrollers and other logic devices in your applications.

The ZVP3306A boasts a low on-resistance (RDS(on)) of just 10 Ohms, which translates to reduced power losses and improved efficiency in your circuits. This feature is particularly beneficial in applications where power conservation is crucial, such as battery-operated devices, portable electronics, and energy management systems.

Rated for a maximum drain-source voltage (VDS) of -60V, the ZVP3306A provides a robust solution for handling higher voltage requirements in your designs. Additionally, its fast switching speed enhances performance in switching applications, making it suitable for use in PWM circuits, power management, and other applications requiring efficient switching characteristics.

The ZVP3306A is also characterized by its high input impedance and low gate charge, which further contribute to its low power consumption and ease of drive. These features, combined with its thermal and electrical stability, make the ZVP3306A a reliable component for use in a variety of applications, including load switching, power conversion, motor control, and more.

In summary, Diodes Incorporated's ZVP3306A P-Channel MOSFET is a versatile and efficient component that offers designers a balance of performance, power efficiency, and compact packaging. Whether you're working on consumer electronics or industrial control systems, the ZVP3306A is engineered to meet your needs with excellence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5288 $50.2360
235+ $0.4339 $101.9665
360+ $0.4204 $151.3440
495+ $0.4068 $201.3660
640+ $0.3932 $251.6480
855+ $0.3526 $301.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,731 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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