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ZXMC3A16DN8TA

Part No ZXMC3A16DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.9A, 4.1A
Maximum Rds On at Id,Vgs 35 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 17.5nC @ 10V
Max Input Capacitance 796pF @ 25V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 036929-ZXMC3A16DN8TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMC3A16DN8TA CAD Model

Description

Introducing the ZXMC3A16DN8TA - A High-Efficiency Dual MOSFET from Diodes Incorporated

The ZXMC3A16DN8TA is a cutting-edge dual MOSFET solution designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This product is specifically engineered to deliver high efficiency and performance in a compact package, making it an ideal choice for a wide range of power management applications.

This dual MOSFET is housed in a small 8-pin SOP package, which is optimized for minimal footprint and low on-resistance. The device features two N-channel enhancement mode MOSFETs, which are configured in a common drain setup. This allows for high current handling capability while maintaining a low voltage drop across the device, ensuring efficient power conversion and reduced energy loss.

The ZXMC3A16DN8TA boasts an impressive continuous drain current (ID) of 5.5A for each MOSFET, with a low threshold voltage that ensures quick switching and responsiveness. The device operates over a wide range of gate-source voltages, providing flexibility and compatibility with various control circuits and drivers.

With its advanced trench MOSFET technology, the ZXMC3A16DN8TA achieves a low RDS(on) value, which translates to reduced conduction losses and improved overall efficiency. This feature, combined with the device's ability to operate at high switching frequencies, makes it a perfect choice for applications such as DC-DC converters, power supplies, motor drives, and other power-intensive circuits.

Moreover, the ZXMC3A16DN8TA is designed with robustness in mind, featuring built-in protection against overcurrent and thermal overload. This ensures long-term reliability and stability, even in demanding conditions. The device also meets RoHS standards, adhering to environmental regulations and promoting sustainability.

In summary, the ZXMC3A16DN8TA from Diodes Incorporated is a high-performance dual MOSFET that offers efficiency, compactness, and reliability. Its advanced features and robust design make it an excellent choice for engineers and designers looking to optimize their power management systems.

For detailed specifications and application notes, customers are encouraged to visit the Diodes Incorporated website or contact their support team for more information.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7747 $50.3555
140+ $0.7248 $101.4720
215+ $0.6998 $150.4570
310+ $0.6498 $201.4380
405+ $0.6248 $253.0440
505+ $0.5998 $302.8990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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