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ZXMN10A08E6QTA

Part No ZXMN10A08E6QTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 61V~100V SOT26 T&R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 50 V
Power Dissipation (Max) 1.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 979116-ZXMN10A08E6QTA
Ultra Librarian 3D Model Ultra Librarian ZXMN10A08E6QTA CAD Model

Description

Introducing the ZXMN10A08E6QTA MOSFET from Diodes Incorporated

The ZXMN10A08E6QTA is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive portfolio, engineered to deliver efficient power control and conversion in a compact package.

Key Features

  • Device Type: N-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 4.4A
  • RDS(on): 120mΩ at VGS = 10V
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to +150°C
  • Package: E-Line (TO92 Compatible)

Performance and Applications

The ZXMN10A08E6QTA MOSFET is engineered for optimal performance with a low on-resistance (RDS(on)) that ensures high efficiency in power conversion and management tasks. With a 100V drain-source voltage and a continuous drain current of 4.4A, this device is capable of handling moderate power levels making it suitable for a wide range of applications.

Its robust thermal performance, characterized by a power dissipation of 1.25W, allows for reliable operation even in demanding conditions. The operating temperature range of -55°C to +150°C ensures stability and functionality across various environmental scenarios.

Common applications for the ZXMN10A08E6QTA include, but are not limited to, power supply circuits, DC-DC converters, motor drives, and other power management systems where efficiency and space-saving are crucial. Its compact E-Line package is compatible with the industry-standard TO92 footprint, providing ease of integration into existing designs.

Quality and Reliability

As with all Diodes Incorporated products, the ZXMN10A08E6QTA MOSFET is manufactured with a commitment to quality and reliability. It is designed to meet the stringent requirements of the electronics industry, ensuring long-term performance and dependability for manufacturers and end-users alike.

Whether for consumer electronics, industrial applications, or automotive systems, the ZXMN10A08E6QTA from Diodes Incorporated is an excellent choice for designers looking to enhance their power management solutions with a reliable and efficient component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4134 $57.8760
345+ $0.3393 $117.0585
530+ $0.3286 $174.1580
730+ $0.3181 $232.2130
940+ $0.3075 $289.0500
1,260+ $0.2756 $347.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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