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ZXMN2B14FHTA

Part No ZXMN2B14FHTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.5A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 872pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036962-ZXMN2B14FHTA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMN2B14FHTA CAD Model

Description

Introducing the ZXMN2B14FHTA MOSFET from Diodes Incorporated

The ZXMN2B14FHTA is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) from Diodes Incorporated, designed to deliver efficient power management and signal amplification in a wide range of applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing innovative solutions that enhance the functionality and reliability of electronic systems.

Key Features

  • Low On-Resistance: The device features a low on-resistance of typically 20 mΩ at VGS = 4.5V, ensuring minimal power loss and heat generation during operation.
  • High Continuous Drain Current: With a robust continuous drain current (ID) of up to 5.5A, the ZXMN2B14FHTA is capable of handling high current loads, making it suitable for demanding power applications.
  • Enhanced Power Dissipation: The MOSFET is designed for enhanced power dissipation, enabling it to manage thermal stress effectively during prolonged use.
  • Low Threshold Voltage: A low threshold voltage allows for efficient operation at lower gate drive voltages, which can be particularly beneficial in battery-operated devices where power conservation is crucial.

Applications

The ZXMN2B14FHTA is versatile and can be used in a variety of applications, including:

  • Power management modules
  • DC-DC converters
  • Motor control circuits
  • Load switches
  • Battery management systems
  • Switching circuits

Package and Reliability

This MOSFET comes in a compact SOT23 package, which not only saves space on the PCB but also ensures a low thermal resistance path to the ambient environment. The ZXMN2B14FHTA is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental responsibility. Additionally, it is characterized for operation from -55°C to +150°C, providing reliable performance across a broad range of temperature conditions.

With its combination of efficiency, reliability, and compact form factor, the ZXMN2B14FHTA from Diodes Incorporated stands out as an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1512 $50.6520
810+ $0.1241 $100.5210
1,250+ $0.1202 $150.2500
1,720+ $0.1163 $200.0360
2,225+ $0.1125 $250.3125
2,980+ $0.1008 $300.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,180 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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