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ZXMN6A11DN8TA

Part No ZXMN6A11DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 2.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 120 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 5.7nC @ 10V
Max Input Capacitance 330pF @ 40V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 036979-ZXMN6A11DN8TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN6A11DN8TA CAD Model

Description

Introducing the ZXMN6A11DN8TA from Diodes Incorporated

The ZXMN6A11DN8TA is a cutting-edge, high-performance MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to cater to a wide array of applications, ranging from power management to switching circuits, providing a highly efficient solution for your electronic needs.

Constructed with advanced trench MOSFET technology, the ZXMN6A11DN8TA offers exceptional on-resistance (R<sub>DS(on)) and low threshold voltage, which translates to reduced conduction losses and superior efficiency in operation. The device is housed in a compact and robust DFN2020-8 (Dual) package, ensuring a minimal footprint on the PCB while providing excellent thermal performance.

Key Features:

  • Low On-Resistance: The ZXMN6A11DN8TA boasts an ultra-low on-resistance which significantly minimizes power dissipation, making it ideal for high-efficiency power applications.
  • High Continuous Drain Current: With a high continuous drain current rating, this MOSFET can handle significant levels of current, making it suitable for demanding applications.
  • Enhanced Thermal Performance: The DFN2020-8 (Dual) package is designed for improved heat dissipation, ensuring reliable operation even under high power and temperature conditions.
  • Fast Switching Speed: The device's fast switching capabilities enable efficient operation in high-frequency circuits, reducing switching losses and improving overall performance.

The ZXMN6A11DN8TA is optimized for synchronous rectification in DC/DC converters, which makes it a perfect choice for power supplies in computing and telecom applications. Additionally, its robustness and reliability make it suitable for load switch and battery protection circuits in portable electronics, as well as for motor drive control in more power-hungry devices.

With its combination of high efficiency, compact size, and thermal management, the ZXMN6A11DN8TA from Diodes Incorporated is an excellent choice for designers looking to optimize their power management solutions. Whether you're working on consumer electronics or industrial systems, this MOSFET will help you achieve a high-performance end product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 476 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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