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ZXMN7A11KTC

Part No ZXMN7A11KTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 70V 6.1A D-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 70V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.4nC @ 10V
Max Input Capacitance 298pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.11W (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 036986-ZXMN7A11KTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN7A11KTC CAD Model

Description

Introducing the ZXMN7A11KTC from Diodes Incorporated

The ZXMN7A11KTC is a high-performance, energy-efficient MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This device is designed to cater to a wide range of applications, including power management, load switching, and motor control in both industrial and consumer electronic products.

Key Features

  • Low On-Resistance: The ZXMN7A11KTC boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: This MOSFET can handle a high continuous drain current (I<sub>D), making it suitable for applications requiring significant power handling capabilities.
  • Enhanced Thermal Performance: With its advanced thermal management features, the ZXMN7A11KTC is capable of operating at higher temperatures while maintaining its performance and reliability.
  • Fast Switching Speed: The device is engineered for fast switching, reducing transition losses and improving performance in high-frequency applications.
  • Gate Charge Optimization: The optimized gate charge (Q<sub>g) of the ZXMN7A11KTC allows for efficient switching, further enhancing the device's energy-saving characteristics.

Applications

The versatility of the ZXMN7A11KTC MOSFET makes it an ideal choice for a plethora of applications, including:

  • DC/DC converters
  • Power supplies
  • Motor drives
  • Battery management systems
  • Switching regulators
  • LED lighting solutions

Package and Availability

The ZXMN7A11KTC is available in a compact, surface-mount package that is RoHS compliant and designed for automated assembly processes. This package ensures a minimal footprint on PCBs, providing a space-saving solution for densely packed electronic assemblies.

With its robust design and superior electrical characteristics, the ZXMN7A11KTC from Diodes Incorporated stands out as a reliable and efficient component for designers looking to optimize their power management and switching systems. Its combination of high performance, durability, and energy efficiency makes it a valuable addition to any electronic product requiring state-of-the-art power MOSFET technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5501 $52.2595
195+ $0.5147 $100.3665
305+ $0.4969 $151.5545
435+ $0.4614 $200.7090
565+ $0.4437 $250.6905
705+ $0.4259 $300.2595
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,380 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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