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ZXMP3F36N8TA

Part No ZXMP3F36N8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.2A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 43.9nC @ 15V
Max Input Capacitance 2265pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 057864-ZXMP3F36N8TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMP3F36N8TA CAD Model

Description

Introducing the ZXMP3F36N8TA MOSFET by Diodes Incorporated

Diodes Incorporated presents the ZXMP3F36N8TA, a high-performance P-Channel enhancement mode MOSFET designed to deliver efficient power management and control in a wide array of electronic applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing state-of-the-art semiconductor solutions that meet the evolving needs of modern electronics.

Key Features

  • Low On-Resistance: The ZXMP3F36N8TA boasts a low on-resistance, which translates to reduced conduction losses and improved efficiency in electronic circuits, making it an ideal choice for power-sensitive applications.
  • High Power Dissipation: With an impressive power dissipation capability, this MOSFET can handle higher currents and dissipate more heat, ensuring reliable performance even under strenuous conditions.
  • Advanced Packaging: Encased in a compact SOT-223 package, the ZXMP3F36N8TA is optimized for space-constrained applications while providing excellent thermal performance.

Applications

The versatility of the ZXMP3F36N8TA makes it suitable for a diverse range of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management Circuits
  • Motor Control Modules

Technical Specifications

Here are some of the technical highlights of the ZXMP3F36N8TA:

  • Drain-Source Voltage (V<sub>DS): -30V
  • Continuous Drain Current (I<sub>D): -2.7A
  • Gate-Source Voltage (V<sub>GS): ±20V
  • R<sub>DS(on): 100mΩ at V<sub>GS = -10V
  • Maximum Power Dissipation (P<sub>D): 2.5W

Environmental and Quality Standards

The ZXMP3F36N8TA is designed to comply with the highest environmental and quality standards, ensuring reliability and sustainability. It is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental responsibility.

In summary, the ZXMP3F36N8TA from Diodes Incorporated is a robust and efficient solution for designers looking to optimize power management in their electronic designs. With its low on-resistance, high power dissipation, and compact footprint, it stands out as a high-quality component in the semiconductor industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,330 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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