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ZXTDE4M832TA

Part No ZXTDE4M832TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 80V/70V 8MLP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN, PNP
Maximum Current Collector 3.5A, 2.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V, 70V
Max Vce (sat) 325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
Collector Cut-off Current(Max) 25nA
Typical Gain (hFE) (Min) 300 @ 200mA, 2V / 40 @ 1.5A, 5V
Maximum Power Dissipation 1W
Frequency - Transition 160MHz, 180MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP (3x2)
Win Source Part Number 004891-ZXTDE4M832TA
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian ZXTDE4M832TA CAD Model

Description

Product Overview: ZXTDE4M832TA from Diodes Incorporated

The ZXTDE4M832TA is a high-performance, low saturation voltage dual NPN transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is part of the company's extensive range of bipolar transistors, which are known for their reliability and efficiency in various electronic applications.

Key Features

  • Device Type: Dual NPN Transistor
  • Configuration: Dual
  • Collector-Emitter Voltage (VCEO): 30V
  • Collector Current (IC): 4A
  • Power Dissipation (Pd): 2W
  • DC Current Gain (hFE): 100 to 250 at 2A
  • Transition Frequency (fT): 160MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-89

Applications

The ZXTDE4M832TA is ideal for a wide range of applications that require high current gain and low saturation voltage. These include:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Motor Control Circuits
  • Signal Processing
  • Switching Applications

Performance and Quality

Diodes Incorporated's ZXTDE4M832TA transistors are designed to deliver exceptional performance with a focus on reducing power loss and improving efficiency. The dual transistor configuration allows for compact PCB layouts and reduced component count, which is beneficial for space-constrained applications. With its robust operating temperature range and high power dissipation capability, the ZXTDE4M832TA is suitable for demanding environments and continuous operation.

Environmental and Regulatory Compliance

The ZXTDE4M832TA meets various environmental and regulatory standards, ensuring compatibility with global manufacturing requirements. This includes compliance with RoHS directives, which restrict the use of certain hazardous substances in electrical and electronic equipment.

For designers and engineers looking for a reliable dual NPN transistor that can deliver high performance in a compact package, the ZXTDE4M832TA from Diodes Incorporated is an excellent choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3217 $57.9060
440+ $0.2640 $116.1600
680+ $0.2557 $173.8760
935+ $0.2476 $231.5060
1,210+ $0.2392 $289.4320
1,620+ $0.2145 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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