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IPB100N06S3L-03

Part No IPB100N06S3L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS®-T Power-Transistor
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 230μA
Gate Charge (Qg) (Maximum) @ Vgs 550nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 26240pF @ 25V
Vgs (Maximum) ±16V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 2.7 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1186021-IPB100N06S3L-03
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name IPB100N06S3L-03
Introduction Date February 23, 2005
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IPB100N06S3L-03 CAD Model

Description

The Infineon Technologies IPB100N06S3L-03 is a MOSFET transistor with N channel type.

  • Temperature Range: -55°C to 175°C
  • Drain-Source Breakdown Voltage: 55V
  • Package: TO-263
  • Power Dissipation: 300W
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Rds on: 2.7 mOhm @ 80A and 10V
  • Gate-Source Voltage Threshold: 2.2V @ 230μA
  • Gate Charge: 550nC @ 10V
  • Gate-Source Voltage: ±16V
  • Input Capacitance: 26240pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $62.5624 $62.5624
3+ $51.3333 $153.9999
4+ $49.7292 $198.9168
5+ $48.1251 $240.6255
7+ $46.5209 $325.6463
9+ $41.7084 $375.3756
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 480 pieces
Order Increment : 1 pcs
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