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ZXTN5551FLTA

Part No ZXTN5551FLTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 130MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 044188-ZXTN5551FLTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Multimedia, Industrial
Ultra Librarian 3D Model Ultra Librarian ZXTN5551FLTA CAD Model

Description

Introducing the ZXTN5551FLTA - A High-Performance NPN Transistor from Diodes Incorporated

The ZXTN5551FLTA is a cutting-edge NPN bipolar transistor brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is designed for high efficiency and reliability, making it an ideal choice for a wide range of electronic applications. The ZXTN5551FLTA is housed in a compact SOT23 package, which is well-suited for space-constrained applications.

Key Features and Benefits

  • High Power Handling: With a collector power dissipation of up to 1.2 Watts, the ZXTN5551FLTA is capable of handling high power levels, making it suitable for demanding applications.
  • High Current Capability: This transistor can support continuous collector currents of up to 5 Amps, allowing it to drive larger loads with ease.
  • Low Saturation Voltage: The low collector-emitter saturation voltage of typically 0.1V at 5A minimizes power loss and improves efficiency, which is crucial for power management applications.
  • High hFE: With a high current gain (hFE) of up to 300 at 2A, this transistor ensures excellent amplification characteristics for signal processing applications.
  • Robust Performance: The ZXTN5551FLTA is designed to operate within a wide temperature range from -55°C to +150°C, ensuring reliable performance under varying environmental conditions.

Applications

The versatility of the ZXTN5551FLTA makes it suitable for a broad spectrum of applications, including:

  • Power management circuits
  • DC-DC converters
  • Motor control circuits
  • Switching regulators
  • Amplification stages in audio equipment
  • Driver stages in high-fidelity amplifiers

Whether you're designing a sophisticated audio system, an efficient power supply, or a robust motor control circuit, the ZXTN5551FLTA offers the performance and reliability you need. Its compact footprint and powerful specifications make it a top choice among professionals seeking to enhance their electronic designs with a high-quality NPN transistor.

For detailed specifications, application notes, and additional resources, please visit the Diodes Incorporated website or contact their support team for technical assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1135 $50.5075
1,075+ $0.0932 $100.1900
1,665+ $0.0903 $150.3495
2,290+ $0.0874 $200.1460
2,965+ $0.0844 $250.2460
3,965+ $0.0757 $300.1505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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