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ZXTP4001ZTA

Part No ZXTP4001ZTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 1A
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 13 Weeks
Features Bipolar (BJT) Transistor PNP 60 V 1 A - 1.5 W Surface Mount SOT-89-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-243AA
Case / Package SOT-89-3
Family Name ZXTP4001
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 904418-ZXTP4001ZTA
Ultra Librarian 3D Model Ultra Librarian ZXTP4001ZTA CAD Model

Description

The ZXTP4001ZTA is a high-performance PNP transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This transistor is part of Diodes Incorporated's extensive range of bipolar transistors, which are known for their reliability and efficiency in various electronic applications.

Key Features:

  • Transistor Type: PNP - This indicates that the ZXTP4001ZTA is a positive-negative-positive type bipolar junction transistor, which primarily uses holes as charge carriers and is typically used for amplification or switching in electronic circuits.
  • Current - Collector (Ic) (Max): 1A - The transistor can handle a maximum collector current of 1 ampere, making it suitable for moderate power applications.
  • Voltage - Collector Emitter Breakdown (Max): 40V - With a maximum collector-emitter breakdown voltage of 40 volts, the ZXTP4001ZTA can be used in circuits with relatively high voltage requirements.
  • Power - Max: 1.2W - The maximum power dissipation of the transistor is 1.2 watts, which determines the amount of energy it can convert to heat without damaging itself.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V - This specifies the transistor's ability to amplify the input current; a minimum DC current gain of 100 is provided at a collector current of 500mA and a collector-emitter voltage of 10V.
  • Operating Temperature: -55°C ~ 150°C - The ZXTP4001ZTA can operate within a wide temperature range, making it suitable for use in environments with extreme temperatures.

With its SOT-89 package, the ZXTP4001ZTA is designed for surface-mount applications, allowing for efficient assembly and saving space on printed circuit boards. This transistor is ideal for driving loads and as an active component in power management, signal processing, and other electronic circuits requiring a robust PNP transistor.

Diodes Incorporated's commitment to quality ensures that the ZXTP4001ZTA meets the stringent requirements of the electronics industry, providing reliable performance for both commercial and industrial applications. Whether you're designing power supplies, amplifiers, or looking to switch loads, the ZXTP4001ZTA is a versatile component that offers a balance of power handling and amplification capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1930 $57.9000
730+ $0.1585 $115.7050
1,130+ $0.1535 $173.4550
1,560+ $0.1485 $231.6600
2,015+ $0.1436 $289.3540
2,695+ $0.1287 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,970 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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