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Same model may have multiple batches, images only for reference.
2N7000-D26Z Real Image
Same model may have multiple batches, images only for reference.

2N7000-D26Z

Part No 2N7000-D26Z
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL FIELD-EFFECT TRANSI / N-Channel 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Fairchild Semiconductor
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
Power Dissipation (Max) 400mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-92-3
Case / Package TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 2156-2N7000-D26Z,ONSFSC2N7000-D26Z
Standard Package 1
Win Source Part Number 1324739-2N7000-D26Z
Ultra Librarian 3D Model Ultra Librarian 2N7000-D26Z CAD Model

Description

The Fairchild Semiconductor 2N7000-D26Z is a MOSFET transistor manufactured by.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 200mA @ 25°C
  • On-Resistance (Rds On): 5Ohm @ 500mA and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 3V @ 1mA
  • Power Dissipation: 400mW
  • Package: TO-92-3
  • Packaging: Bulk

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