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38AN08A1

Part No 38AN08A1
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 22A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 8665pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 450W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 197682-38AN08A1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 38AN08A1 CAD Model

Description

Product Overview

The 38AN08A1 component is designed for precision and reliability in sophisticated electronic systems. Its advanced features and compact form factor make it suitable for a variety of uses.

Applications

  • Medical equipment
  • Automotive electronics
  • Wireless communication
  • Instrumentation

Features and Benefits

  • Advanced circuitry for enhanced performance
  • Low thermal emission
  • Highly versatile with broad compatibility
  • Cost-effective solution

With the integration of cutting-edge technology, the 38AN08A1 ensures reliable performance, catering to engineers and system designers who demand the highest standards in their projects.

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Shipping Information

Shipped from HK warehouse
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