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FCD2250N80Z

Part No FCD2250N80Z
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2.6A TO252-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 260μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 585pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 2.25 Ohm @ 1.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1037870-FCD2250N80Z
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FCD2250N80Z CAD Model

Description

The FCD2250N80Z from Fairchild/ON Semiconductor is an N-channel MOSFET with a drain-source breakdown voltage of 800V and a continuous drain current of 2.6A @ 25°C.

  • Manufacturer: Fairchild/ON Semiconductor
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2.6A @ 25°C
  • Maximum Power Dissipation: 39W
  • Mounting Type: D-Pak
  • Gate-Source Threshold Voltage: 4.5V @ 260μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Rds On @ Id,Vgs: 2.25 Ohm @ 1.3A and 10V
  • Temperature Range: -55°C to 150°C
  • Package Quantity: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1965 $53.8425
90+ $1.1208 $100.8720
140+ $1.0829 $151.6060
200+ $1.0072 $201.4400
260+ $0.9693 $252.0180
325+ $0.9315 $302.7375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,970 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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