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Same model may have multiple batches, images only for reference.
FCP099N60E Real Image
Same model may have multiple batches, images only for reference.

FCP099N60E

Part No FCP099N60E
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220 / Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
Datasheet
FCP099N60E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series SuperFET II
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 114nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3465pF @ 380V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 357W (Tc)
Rds On (Maximum) @ Id, Vgs 99 mOhm @ 18.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 774444-FCP099N60E
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Family Name FCP099N60E
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FCP099N60E CAD Model

Description

The Fairchild/ON Semiconductor FCP099N60E is a MOSFET transistor.

  • Series: SuperFET II
  • Maximum Power Dissipation: 357W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Style: Through-hole
  • Channel Type: N
  • Drain-Source Voltage: 600V
  • Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 114nC @ 10V
  • Maximum Rds On: 99 mOhm @ 18.5A, 10V
  • Input Capacitance: 3465pF @ 380V
  • Vgs(th) (Maximum) @ Id: 3.5V @ 250μA
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Package: TO-220-3
  • Halogen-Free: Compliant
  • Estimated EOL Date: 2029
  • Supply and Demand Status: Limited
  • Quantity Per Package: 800

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