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Same model may have multiple batches, images only for reference.
FDA20N50F Real Image
Same model may have multiple batches, images only for reference.

FDA20N50F

Part No FDA20N50F
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 22A TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 3390pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 388W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 015911-FDA20N50F
Popularity Medium
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FDA20N50F CAD Model

Description

Product Overview

Featuring exceptional efficiency characteristics, the FDA20N50F is a reliable N-channel MOSFET suited for demanding power management systems. Its high-temperature endurance provides an edge in varied applications.

Applications

  • Electric vehicle power systems
  • High-performance audio amplifiers
  • Smart grid technologies
  • Industrial motor drives

Features and Benefits

  • Low gate charge for efficient power management
  • Exceptional ruggedness for dynamic electrical environments
  • High-frequency capability supporting advanced applications
  • Compact and lightweight for versatile setups

Additional Details

The FDA20N50F is the go-to component when seeking reliable, cost-effective, and enduring solutions for high-demand scenarios.

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