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Same model may have multiple batches, images only for reference.
FDB120N10 Real Image
Same model may have multiple batches, images only for reference.

FDB120N10

Part No FDB120N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET NCH 100V 74A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 5605pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 74A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 001083-FDB120N10
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB120N10 CAD Model

Description

FDB120N10 MOSFET

The FDB120N10 offers excellent voltage handling capability and robust performance in a compact package. It is ideal for high-current applications.

Features and Benefits

  • Exceptional thermal performance enables efficient heat dissipation.
  • Simplified gate drive requirements for easy integration.
  • Compact form factor supports space-constrained designs.

Applications

  • Motor controls
  • Solar inverters
  • Battery management systems
  • Uninterruptible Power Supplies (UPS)

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4467 $58.7208
58+ $2.0075 $116.4350
90+ $1.9448 $175.0320
123+ $1.8821 $231.4983
159+ $1.8194 $289.2846
213+ $1.6311 $347.4243
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Availability: 1,710 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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